Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures
- Authors
-
- chen, nf
- hj, he
- wang, yt
- lin, ly
- chinese, nf r chen
- Publication Date
- Jan 01, 1997
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- 半导体材料
- Low Temperature
- Molecular Beam Epitaxy
- Gaas Single Crystal
- Lattice Parameter
- Arsenic Interstitial Couples
- Arsenic Precipitates
- Effects Of Backgating Or Sidegating
- Layers
- Dependence
- Dependency
- Cold
- Atomic Layer Deposition
- Layers
- Cryogenic Temperature
- Basses Temperatures
- Low Temp
- Low Temperature
- Economic Dependence
- Dependency Theory
- Dependence
- Dependent Nations
- Core-Periphery Relations
- Center-Periphery Relations
- Plies
- Lamina
- Many-Body Expansion
- Coulomb-Bethe
- Molecular Beam Epitaxy
- Ald
- Cvi (Fabrication)
- Vpe
- Vapor Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapour Phase Epitaxial Growth
- Migration-Enhanced Epitaxy
- Mbe
- Omvpe
- Molecular Beam Epitaxial Growth
- Omcvd
- Movpe
- Metalorganic Chemical Vapour Deposition
- Mocvd
- Laser Deposition
- Crystal Growth From Vapour
- Cvi
- Chemical Vapor Infiltration
- Chemical Vapour Infiltration
- Lpcvd
- Laser-Induced Cvd
- Laser Cvd
- Cvd
- Chemical Vapor Deposition
- Apcvd
- Chemical Vapour Deposition
- Ommbe
- Mombe
- Metalorganic Molecular Beam Epitaxy
- Gsmbe
- Gas Source Mbe
- Cbe
- Chemical Beam Epitaxial Growth
- Molecular Layer Epitaxial Growth
- Mle Growth
- Ale
- Atomic Layer Epitaxial Growth
- Computer Output To Laser Disc
- Low Temperature Analysis
- Low-Temperature Analysis
- Ultralow Temperature
- Tieftemperatur
- License
- Unknown
- External links
Abstract
Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.
