Properties of cubic GaN grown by MBE
- Authors
-
- brandt, o
- yang, h
- mullhauser, jr
- trampert, a
- ploog, kh
- o paul, brandt
- Publication Date
- Jan 01, 1997
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- 半导体材料
- Cubic Gallium Arsenide Film
- Molecular Beam Epitaxy
- Photoluminescence
- Transmission Electron Microscopy
- Molecular-Beam Epitaxy
- Gallium Nitride
- Gaas
- Gallium Arsenide
- Atomic Layer Deposition
- Photoluminescence
- Gallium Nitride
- Atomic Layer Deposition
- Transmission Electron Microscopy
- Molecular Beam Epitaxial Growth
- Omvpe
- Omcvd
- Movpe
- Metalorganic Chemical Vapour Deposition
- Mocvd
- Laser Deposition
- Crystal Growth From Vapour
- Cvi
- Chemical Vapor Infiltration
- Chemical Vapour Infiltration
- Lpcvd
- Laser-Induced Cvd
- Laser Cvd
- Cvd
- Chemical Vapor Deposition
- Apcvd
- Chemical Vapour Deposition
- Ommbe
- Mombe
- Metalorganic Molecular Beam Epitaxy
- Gsmbe
- Gas Source Mbe
- Cbe
- Chemical Beam Epitaxial Growth
- Molecular Layer Epitaxial Growth
- Mle Growth
- Ale
- Atomic Layer Epitaxial Growth
- Electron Microscopy (Transmission)
- Tem (Microscopy)
- Transmission Microscopy
- Microscopie Par Transmission
- Durchstrahlungs-Elektronenmikroskopie
- Tem
- 光致发光
- Many-Body Expansion
- Coulomb-Bethe
- Molecular Beam Epitaxy
- Metalorganic Chemical Vapour Deposition
- Mocvd
- Laser Deposition
- Crystal Growth From Vapour
- Cvi
- Chemical Vapor Infiltration
- Chemical Vapour Infiltration
- Lpcvd
- Laser-Induced Cvd
- Laser Cvd
- Cvd
- Chemical Vapor Deposition
- Apcvd
- Chemical Vapour Deposition
- Ommbe
- Mombe
- Metalorganic Molecular Beam Epitaxy
- Gsmbe
- Gas Source Mbe
- Ald
- Cvi (Fabrication)
- Vpe
- Vapor Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapour Phase Epitaxial Growth
- Migration-Enhanced Epitaxy
- Mbe
- Molecular Beam Epitaxial Growth
- Omvpe
- Omcvd
- Movpe
- Cbe
- Chemical Beam Epitaxial Growth
- Molecular Layer Epitaxial Growth
- Mle Growth
- Ale
- Atomic Layer Epitaxial Growth
- Galliumarsenid
- Arseniures De Gallium
- Gaas
- Many-Body Expansion
- Coulomb-Bethe
- Molecular Beam Epitaxy
- Ald
- Cvi (Fabrication)
- Vpe
- Vapor Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapour Phase Epitaxial Growth
- Migration-Enhanced Epitaxy
- Mbe
- License
- Unknown
- External links
Abstract
We review our investigation of cubic GaN films on (001) GaAs, focusing on the structural, optical, and electrical properties of these films. Cubic GaN films grown epitaxially on GaAs suffer from the large lattice mismatch between these two materials in that they contain extremely high densities of structural defects. Surprisingly, the optical quality of these films does not seem much affected by the presence of defects, as intense photoluminescence is detected a? room temperature and above. Finally, the rather high background electron concentrations in our films is shown to be a consequence of contamination with O and not to be an intrinsic property of cubic phase GaN. (C) 1997 Elsevier Science S.A.
