Affordable Access

PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM ZNSE-TE-(CDSE)(1) (ZNSE)(3) SUPERLATTICE QUANTUM-WELLS

Authors
  • han, hx
  • liu, zx
  • wang, zp
  • zhang, jq
  • peng, zl
  • yuan, sx
  • chinese, hx r han
Publication Date
Jan 01, 1995
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
External links

Abstract

Pressure dependence of photoluminescence from ZnSe:Te-(CdSe)(1)(ZnSe)(3) short period superlattice quantum wells is reported. In addition to the exciton band from the superlattice layers, strong bands for localized excitons self-trapped al single Te (Te-1) atom, double Te atoms (Te-2) and Te clusters (Te-n, n greater than or equal to 3) as well as for the free excitons in isoelectronic Te incorporated ZnSe layers are observed. Significant differences in the pressure and temperature dependencies of the observed exciton transitions are presented and discussed.

Report this publication

Statistics

Seen <100 times