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Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature

Authors
  • hai), (su
  • wen jie), wj wang (wang
  • kun), k ding (ding
  • hua), li gh (li guo
  • yuangfang), yf liu (liu
  • alan g.), ag joly (joly
  • wei), w chen (chen
Publication Date
Jan 01, 2006
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

The temperature and pressure dependences of band-edge photo luminescence from ZnO microrods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of k(B)T with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively. (c) 2006 Elsevier Ltd. All rights reserved.

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