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Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate

Authors
  • han, pd
  • wang, zg
  • duan, xf
  • zhang, z
Publication Date
Jan 01, 2001
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

GaN films were grown in pairs on two opposite c faces of Al2O3 substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. It is found that GaN film on the c-Al2O3 whose c face is forward to its crystal seed has [0001] polarity, and the other film on the C-Al2O3 whose c face is backward to its crystal seed has [000 (1) over bar] polarity. (C) 2001 American Institute of Physics.

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