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Point defects in silicon carbide.

Authors
  • Schneider, J.
  • Maier, K.
Publication Date
Jan 01, 1993
Source
Fraunhofer-ePrints
Keywords
Language
English
License
Unknown
External links

Abstract

A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (SiC). Defect structures to be discussed include shallow nitrogen donors, group-3 acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the silicon vacancy in SiC.

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