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Photon emission from 511-KeV gamma-rays incident on BaF-2 and LaF-3:Nd3+ crystals using a cesium iodide photocathode detector

Authors
  • Kononenko, W.
  • Heinrich, J.G.
  • Lockyer, N.S.
  • Miller, J.M.
  • Woody, C.
  • Kwan, S.
Publication Date
Oct 01, 1996
Identifiers
DOI: 10.1016/S0168-9002(97)00776-6
OAI: oai:inspirehep.net:428036
Source
INSPIRE-HEP
Keywords
License
Unknown
External links

Abstract

We have studied the possibility of using BaF 2 and LaF 3 doped with Nd 3+ , concentrations ranging from 0.1 to 15 mol% as efficient converters of 511 keV gamma rays. We have measured the number of photoelectrons/MeV for both crystals using a parallel-plate avalanche chamber operating with a CsI photocathode. The photocathode is sensitive to wavelengths in the range 160–220 nm. The fast component of the BaF 2 emission spectrum has peaks at roughly 175, 195 and 200 nm, and the LaF 3 :Nd 3+ emission spectrum peaks at 173 nm. We measure 3.71 ± 0.04 ± 1.11 photoelectrons/MeV for the BaF 2 and 4.81 ± 0.04 ± 1.44 photoelectrons/MeV for the LaF 3 :Nd 3− . The results for BaF 2 and LaF 3 :Nd 3+ are consistent with measured scintillation properties of these crystals and CsI photocathode quantum efficiencies.

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