Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells
- Authors
-
- hx, li
- wang, zg
- liang, jb
- xu, b
- jiang, c
- gong, q
- liu, fq
- zhou, w
- Publication Date
- Jan 01, 1998
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Quantum Wells
- Semiconductors
- Electronic Band Structure
- Transistor Structures
- Luminescence
- Optical-Transitions
- Fermi-Edge Singularity
- Mass
- Renormalization
- Heterojunctions
- Luminescence
- Density
- 半导体物理
- Quantum Wells
- Semiconductors
- Luminescence
- Mass
- Group Theory
- Heterojunctions
- Luminescence
- Density
- Wells, Quantum
- Multiple Quantum Well Structures
- Semiconducting Materials
- Semi-Conductors
- Crystalline Semiconductors
- Semiconductor Devices
- Semiconductor Alloys
- Space-Charge Limited Devices
- Halbleiter
- Semi-Conducteurs
- 发光
- Emission Spectra
- Candoluminescence
- Ionoluminescence
- Stokes Law (Optical)
- Triboluminescence
- Mechanoluminescence
- Infrared Luminescence
- Glow
- Noctilucence
- Phosphorescence
- 摩擦发光
- 质量
- Low Mass
- 群论
- Groups, Theory Of
- Substitutions (Mathematics)
- Group Theoretical Schemes
- Monoids
- Quantum Groups
- Spinor Groups
- O Groups
- O(2) Groups
- Renormalisation
- Renormalization
- So Groups
- So(10) Groups
- So(2) Groups
- So(3) Groups
- So(4) Groups
- So(8) Groups
- 发光
- Emission Spectra
- Candoluminescence
- Ionoluminescence
- Stokes Law (Optical)
- Triboluminescence
- Mechanoluminescence
- Infrared Luminescence
- Glow
- Noctilucence
- Phosphorescence
- 摩擦发光
- 密度
- Specific Gravity
- Molar Volume
- Relative Density
- Specific Volume
- Vapour Density
- Densite
- Dichte
- Densities
- 比体积
- Density (Physical)
- Specific Density
- Specific Weight
- License
- Unknown
- External links
Abstract
Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.
