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Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires

Authors
  • Zeng, XB
  • Liao, XB
  • Dai, ST
  • Wang, B
  • Xu, YY
  • Xiang, XB
  • Hu, ZH
  • Diao, HW
  • Kong, GL
Publication Date
Jan 01, 2005
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. Possible reason for these is suggested.

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