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Photoluminescence of GaInP under high pressure

Authors
  • dong, jr
  • gh, li
  • wang, zg
  • dc, lu
  • liu, xl
  • xb, li
  • sun, dz
  • kong, my
  • wang, zj
  • chinese, r dong
Publication Date
Jan 01, 1996
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Photoluminescence of GaInP under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear relationship between lattice constant and hydrostatic pressure. The Gamma valleys of ordered GaInP rise more slowly than that of the disordered one and the relationship between the band gap and the pressure can not be explained in the same way. Taking into account the interactions between the Gamma valley and the folded L valleys, as well as, the X valleys, the experimental pressure dependences of the band gap of ordered GaInP epilayers are calculated and fitted quite well using first order perturbation theory. The results indicate that simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.

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