Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
- Authors
-
- cao, x
- zeng, yp
- kong, my
- pan, la
- wang, bq
- zhu, zp
- wang, xg
- chang, y
- chu, jh
- Publication Date
- Jan 01, 2001
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Molecular Beam Epitaxy
- Semiconducting Iii-V Materials
- High Electron Mobility Transistors
- Electron-Mobility Transistor
- Carrier Density
- Quantum-Wells
- Band-Gap
- 半导体材料
- Atomic Layer Deposition
- Modulation-Doped Field-Effect Transistors
- Carrier Density
- Quantum Wells
- Energy Bands
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- Hemts (Transistors)
- Hfets (Transistors)
- Hetero-Field-Effect Transistors
- High-Electron-Mobility Transistors
- Modfets (Transistors)
- Sdhts (Transistors)
- Selectively-Doped Heterojunction Transistors
- Tegfets (Transistors)
- Two-Dimensional Electron Gas Field-Effect Transistors
- High Electron Mobility Transistors
- Hemt
- Heterostructure Field Effect Transistors
- Hfet
- Modfet
- Modulation Doped Field Effect Transistors
- Sdht
- Selectively Doped Heterojunction Field Effect Transistors
- Tegfet
- Two Dimensional Electron Gas Field Effect Transistors
- Power Hemt
- Power Modfet
- Hemt (Electronics)
- Carrier Concentration
- Carrier Lifetime
- Carrier Diffusion Length
- Electron Lifetime (Semiconductors)
- Carrier Mean Free Path
- Mean Free Path, Carrier
- Carrier Mobility
- Mobility, Carrier
- Carrier Relaxation Time
- Relaxation Time, Carrier
- Electrical Conductivity Transitions
- Semiconductor-Metal Transition
- Switching Transitions
- Electron Mean Free Path
- Electron Mean Free Path (Metals)
- Electron Relaxation Time
- Electron Lifetime (Metals)
- Electron Relaxation Time (Metals)
- Hall Mobility
- Hole Density
- Hole Mobility
- Libre Parcours Moyen De L Electron
- Mittlere Freie Elektronenweglaenge
- Wells, Quantum
- Multiple Quantum Well Structures
- 带隙
- Bands (Solid State Electronics)
- Band Structure
- Electron Energy Bands
- Conduction Bands
- Electronic Density Of States
- Density Of States, Electron
- Electron Density Of States
- Energy Gap
- Band Gap
- Forbidden Gap
- Optical Gap
- Valence Bands
- Energy Gaps (Solid State)
- Bandgap
- 能带结构
- Forbidden Energy Band
- Forbidden Zone
- License
- Unknown
- External links
Abstract
The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed. (C) 2001 Elsevier Science B.V. All rights reserved.
