Affordable Access

PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI

Authors
  • zhong, zt
  • wang, dw
  • liao, xb
  • mou, sm
  • fan, y
  • cf, li
  • acad, zt r zhong
Publication Date
Jan 01, 1991
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
External links

Abstract

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.

Report this publication

Statistics

Seen <100 times