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Photoelectrical properties of insulating LaAlO3-SrTiO3 interfaces.

Authors
  • Lu, Hong-Liang
  • Zhang, Liang
  • Ma, Xiu-Mei
  • Lian, Gui-Jun
  • Yang, Jin-Bo
  • Yu, Da-Peng
  • Liao, Zhi-Min
Type
Published Article
Journal
Nanoscale
Publisher
The Royal Society of Chemistry
Publication Date
Jan 21, 2014
Volume
6
Issue
2
Pages
736–740
Identifiers
DOI: 10.1039/c3nr05162e
PMID: 24301882
Source
Medline
License
Unknown

Abstract

We report photoconductivity of an insulating LaAlO3-SrTiO3 (LAO-STO) heterointerface. Persistent photocurrent induced by a 514 nm laser at room temperature is significant, which is attributed to carriers trapped by a built-in potential well at the interface. Further studies of photoconductivity of the insulating LAO-STO interface performed with a monochrometer demonstrate the photoelectrical response not only in the ultraviolet region but also in the visible and infrared regions. The extrinsic photoconductivity indicates several midgap states located in the insulating LAO-STO interface. Our results provide a deep understanding of the band structure of the insulating LAO-STO heterointerface and promising applications as optoelectronic devices.

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