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Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes

Authors
  • liu, y
  • xiao, xr
  • zeng, yp
  • yan, ch
  • zheng, hq
  • sun, dz
  • acad, y r liu
Publication Date
Jan 01, 1997
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of GaAs bulk materials, was designed and fabricated.

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