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Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot

Authors
  • Liu, H. W.
  • Fujisawa, T.
  • Ono, Y.
  • Inokawa, H.
  • Fujiwara, A.
  • Takashina, K.
  • Hirayama, Y.
Type
Published Article
Publication Date
Feb 21, 2008
Submission Date
Jul 24, 2007
Identifiers
DOI: 10.1103/PhysRevB.77.073310
Source
arXiv
License
Unknown
External links

Abstract

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.

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