Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
- Authors
- Type
- Published Article
- Publication Date
- Feb 21, 2008
- Submission Date
- Jul 24, 2007
- Identifiers
- DOI: 10.1103/PhysRevB.77.073310
- Source
- arXiv
- License
- Unknown
- External links
Abstract
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.