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Origin of negative differential resistance in molecular junctions of Rose Bengal

Authors
  • Bandyopadhyay, Anirban
  • Wakayama, Y.
Type
Preprint
Publication Date
Oct 25, 2006
Submission Date
Oct 25, 2006
Identifiers
DOI: 10.1063/1.2430767
arXiv ID: cond-mat/0610683
Source
arXiv
License
Unknown
External links

Abstract

Negative differential resistance (NDR) is tuned at junctions of electronically different dimer and trimer of Rose Bengal on an atomic flat gold (111) surface. Isolated molecule did not show any NDR. But it was induced to show double NDR with large peak to valley ratio (1.8~3.1) in room temperature via charging its neighbor reproducibly by an electrical pulse. In some sections of junction by applying pulse one could destroy the phenomenon or regenerate it by STM manipulation of molecules. NDR was also independent of polaronic nature. It was possible to write bits 1 and 0 for cationic NDR (in dimer) and 00, 01, 10, 11 for di-anionic NDR (trimer) which generated 2/4 bit memory in a atomic scale junction showing importance of junction electronics in future of moletronics.

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