Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
- Authors
-
- wang, b
- zc, li
- yao, r
- liang, m
- yan, fw
- wang, gh
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Gan-Based
- Led
- Al Composition
- Electron Blocking Layer
- Temperature
- Alloys
- Movpe
- 半导体材料
- Light Emitting Diodes
- Temperature
- Alloys
- Atomic Layer Deposition
- Leds (Light Emitting Diodes)
- Led
- Organic Light Emitting Diodes
- Oled
- Polymer Led
- Superluminescent Diodes
- Led (Diodes)
- Light-Emitting Diodes
- Leds
- Organic Led
- Light Emitting Diode
- 温度
- Curing Temperature
- Temperatur
- Temperature (Francais)
- Body Temperature (Non-Biological)
- Atmospheric Temperature
- Temperature Control
- Water Temperature
- Temperatures
- Absolute Temperature
- Ambient Temperature
- Metallic Alloys
- Alkali Metal Alloys
- Alkaline Earth Alloys
- Intermetallic Compounds
- Barium Alloys
- Caesium Alloys
- Cesium Alloys
- Francium Alloys
- Strontium Alloys
- Metals (Materials)
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- License
- Unknown
- External links
