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Optically rewritable patterns of nuclear magnetization in gallium arsenide.

Authors
  • King, Jonathan P1
  • Li, Yunpu
  • Meriles, Carlos A
  • Reimer, Jeffrey A
  • 1 Department of Chemical Engineering, University of California, 201 Gilman Hall, Berkeley, California 94720, USA. [email protected]
Type
Published Article
Journal
Nature Communications
Publisher
Springer Nature
Publication Date
Jun 26, 2012
Volume
3
Pages
918–918
Identifiers
DOI: 10.1038/ncomms1918
PMID: 22735446
Source
Medline
License
Unknown

Abstract

The control of nuclear spin polarization is important to the design of materials and algorithms for spin-based quantum computing and spintronics. Towards that end, it would be convenient to control the sign and magnitude of nuclear polarization as a function of position within the host lattice. Here we show that, by exploiting different mechanisms for electron-nuclear interaction in the optical pumping process, we are able to control and image the sign of the nuclear polarization as a function of distance from an irradiated GaAs surface. This control is achieved using a crafted combination of light helicity, intensity and wavelength, and is further tuned via use of NMR pulse sequences. These results demonstrate all-optical creation of micron scale, rewritable patterns of positive and negative nuclear polarization in a bulk semiconductor without the need for ferromagnets, lithographic patterning techniques, or quantum-confined structures.

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