Optically controlled quantum dot gated transistors with high on/off ratio
- Authors
- Publication Date
- Jan 01, 2010
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
- License
- Unknown
- External links
Abstract
We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.
