Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
- Authors
-
- sun, bq
- jiang, ds
- pan, z
- lh, li
- rh, wu
- chinese, bq r sun
- Publication Date
- Jan 01, 2001
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Molecular Beam Epitaxy
- Quantum Wells
- Semiconducting Iiiv Materials
- Luminescence
- Gaasn
- 半导体物理
- Atomic Layer Deposition
- Quantum Wells
- Luminescence
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- Wells, Quantum
- Multiple Quantum Well Structures
- 发光
- Emission Spectra
- Candoluminescence
- Ionoluminescence
- Stokes Law (Optical)
- Triboluminescence
- Mechanoluminescence
- Infrared Luminescence
- Glow
- Noctilucence
- Phosphorescence
- 摩擦发光
- License
- Unknown
- External links
Abstract
We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.
