Affordable Access

Access to the full text

Optical Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Fifth-Group Elements

Authors
  • Kryzhanovskaya, N. V.1
  • Dragunova, A. S.2
  • Komarov, S. D.2, 3
  • Nadtochiy, A. M.2
  • Gladyshev, A. G.1
  • Babichev, A. V.1
  • Uvarov, A. V.2
  • Andryushkin, V. V.1
  • Denisov, D. V.4
  • Kolodeznyi, E. S.1
  • Novikov, I. I.1
  • Karachinsky, L. Ya.1
  • Egorov, A. Yu.4
  • 1 ITMO University, St. Petersburg, 197101, Russia , St. Petersburg (Russia)
  • 2 Alferov University, St. Petersburg, 194021, Russia , St. Petersburg (Russia)
  • 3 St. Petersburg State Electrotechnical University “LETI”, St. Petersburg, 197376, Russia , St. Petersburg (Russia)
  • 4 Connector Optics LLC, St. Petersburg, 194292, Russia , St. Petersburg (Russia)
Type
Published Article
Journal
Optics and Spectroscopy
Publisher
Pleiades Publishing
Publication Date
Feb 01, 2021
Volume
129
Issue
2
Pages
256–260
Identifiers
DOI: 10.1134/S0030400X21020089
Source
Springer Nature
Keywords
License
Yellow

Abstract

AbstractThe optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spectroscopy. The PL line of the formed array of island lies in the range of 950–1000 nm at room temperature. The PL studies in the temperature range of 78–300 K indicate significant inhomogeneity of the island array, existence of nonradiative recombination centers, and transport of carriers between islands. The photoluminescence excitation spectra exhibit a line related to the absorption in the residual two-dimensional InGaPAs layer. Annealing of the structures allowed us to increase the PL intensity at room temperature up to 300% with a slight short-wavelength shift of the island emission line and to improve the homogeneity inside the island array.

Report this publication

Statistics

Seen <100 times