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Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Authors
  • lei, w
  • chen, yh
  • wang, yl
  • huang, xq
  • zhao, c
  • liu, jq
  • xu, b
  • jin, p
  • zeng, yp
  • wang, zg
Publication Date
Jan 01, 2005
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples. (c) 2005 Elsevier B.V. All rights reserved.

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