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Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Authors
  • zhang, yc
  • huang, cj
  • xu, b
  • xl, ye
  • ding, d
  • wang, jz
  • yf, li
  • liu, f
  • wang, zg
Publication Date
Jan 01, 2001
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

We have fabricated a new self-assembled quantum dot system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix. The low-temperature photoluminescence and atomic force microscopy measurements confirm the realization of the structure. In contrast to traditional InAs/Ga(Al)As quantum dots, the temperature dependence of the photoluminescence of the dots in such a structure exhibits an electronically decoupled feature due to a higher energy level of the wetting layer which keeps the dots more isolated from each other. (C) 2001 Published by Elsevier Science B.V.

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