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Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Authors
  • xu, y
  • zhu, xp
  • xj, ye
  • kang, xn
  • cao, q
  • guo, l
  • chen, lh
  • acad, xu y r chinese
Publication Date
Jan 01, 2004
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

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