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Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Authors
  • Nishiguchi, K. (author)
  • Castellanos-Gomez, A. (author)
  • Yamaguchi, H. (author)
  • Fujiwara, A. (author)
  • Van der Zant, H.S.J. (author)
  • Steele, G.A. (author)
Publication Date
Aug 03, 2015
Source
TU Delft Repository
Keywords
Language
English
License
Unknown
External links

Abstract

We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS2 layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors. / QN/Quantum Nanoscience / Applied Sciences

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