Affordable Access

deepdyve-link
Publisher Website

Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Authors
  • Hsu, Po-Chun (Brent)
  • Han, Han
  • Simoen, Eddy
  • Merckling, Clement
  • Eneman, Geert
  • Mols, Yves
  • Collaert, Nadine
  • Heyns, Marc
Publication Date
Jan 01, 2019
Identifiers
DOI: 10.1002/pssa.201900293
OAI: oai:archive.ugent.be:8637123
Source
Ghent University Institutional Archive
Keywords
Language
English
License
Unknown
External links

Abstract

The observation and interpretation of Frank stacking faults, Shockley stacking faults, Lomer dislocations, and 60 degrees misfit dislocations, which have similar line shapes in the (001) In0.53Ga0.47As crystalline surface, are performed with the electron channeling contrast imaging (ECCI) technique. To minimize the backscattered electron (BSE) contrast that resulted from the surface morphology, a relatively flat region is first selected and compared with an atomic force microscopy (AFM) image and then, subsequently, examining ECCI with transmission electron microscopy (TEM)-like invisibility criteria. By orthogonally choosing the diffraction vector g between (220) and (2-20), misfit dislocations seem to be always visible but partially faint in the g parallel to the line direction on the surface. With respect to the image contrast, Frank stacking faults and Lomer dislocations are likely to be completely invisible for parallel g. The criteria are further confirmed by cross-sectional TEM analysis, which shows a preferred homogeneous surface nucleation.

Report this publication

Statistics

Seen <100 times