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Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures

Authors
  • Khanin, Yu. N.1
  • Vdovin, E. E.1
  • Mishchenko, A.2
  • Novoselov, K. S.2
  • 1 Institute of Problems of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia , Chernogolovka (Russia)
  • 2 School of Physics and Astronomy, University of Manchester, Manchester, Oxford Road, M13 9PL, United Kingdom , Manchester (United Kingdom)
Type
Published Article
Journal
Semiconductors
Publisher
Pleiades Publishing
Publication Date
Aug 07, 2019
Volume
53
Issue
8
Pages
1038–1041
Identifiers
DOI: 10.1134/S1063782619080104
Source
Springer Nature
Keywords
License
Yellow

Abstract

AbstractTunneling and magnetic tunneling are investigated in graphene/h-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h-BN barrier, and current caused by their presence is generated.

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