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Observation of field-driven blue shift in delta-doped Si n-i-p-i multiple quantum wells

Authors
  • cheng, w
  • xia, jb
  • jeong, ms
  • huang, xl
  • kim, jy
  • ihm, sh
  • suh, ek
  • lee, hj
Publication Date
Jan 01, 1999
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

We report the observation of the field-driven blue shift at near absorption edge in the photo-current response spectra of delta-doped Si n-i-p-i multiple quantum wells due to the widening of the effective energy gap. This phenomenon differs from the observed results in GaAs/AlGaAs and GeSi/Si superlattices, because the physical mechanisms of forming energy band in these superlattice samples are different. Our experimental results are interpreted satisfactorily by the theoretical calculation. (C) 1999 Elsevier Science Ltd. All rights reserved.

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