Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model
- Authors
-
- wang, m
- yx, gu
- hm, ji
- yang, t
- wang, zg
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Epitaxy
- Movpe
- 半导体材料
- Epitaxy
- Atomic Layer Deposition
- Epitaxial Growth
- Solid Phase Epitaxial Growth
- Solid Phase Epitaxy
- Spe
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- License
- Unknown
- External links
Abstract
We investigate the band structure of a compressively strained In(Ga)As/In(0.53)Ga(0.47)As quantum well (QW) on an InP substrate using the eight-band k.p theory. Aiming at the emission wavelength around 2.33 mu m, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs/In(0.53)Ga(0.47)As QW with a well width of 4.1 nm emitting at 2.33 mu m by optimizing the strain and the well width.