Affordable Access

Numerical simulation of 2D Silicon MESFET and MOSFET described by the MEP based energy-transport model with a mixed finite elements scheme

Authors
Publication Date
Source
Hal-Diderot
Keywords
  • Mesfet And Mosfet Semiconductor Devices
  • Maximum Entropy Principle
  • Parabolic Band Approximation
  • Automatic Differentiation
  • Numerical Simulation
  • Mixed Finite Element
  • [Info.Info-Oh] Computer Science [Cs]/Other [Cs.Oh]
External links

Abstract

The Mixed Finite Element approximation scheme presented in is used to simulate a consistent hydrodynamical model for electron transport in semiconductors, free of any fitting parameters, formulated on the basis of the maximum entropy principle (MEP) in \cite{AnRo,Ro1,Ro2}.. 2D-MESFET and 2D-MOSFET Silicon devices are simulated in the parabolic band approximation. Comparison with the results obtained by the Stratton model are presented for completeness.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments