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Numerical simulation of 2D Silicon MESFET and MOSFET described by the MEP based energy-transport model with a mixed finite elements scheme

Authors
  • Anile, A.M.
  • Marrocco, Americo
  • Romano, V.
  • Sellier, J.M.
Publication Date
Jan 01, 2004
Source
Hal-Diderot
Keywords
License
Unknown
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Abstract

The Mixed Finite Element approximation scheme presented in is used to simulate a consistent hydrodynamical model for electron transport in semiconductors, free of any fitting parameters, formulated on the basis of the maximum entropy principle (MEP) in \cite{AnRo,Ro1,Ro2}.. 2D-MESFET and 2D-MOSFET Silicon devices are simulated in the parabolic band approximation. Comparison with the results obtained by the Stratton model are presented for completeness.

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