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A novel application to quantum dot materials to the active region of superluminescent diodes

Authors
  • zhang, zy
  • meng, xq
  • jin, p
  • cm, li
  • sc, qu
  • xu, b
  • xl, ye
  • wang, zg
Publication Date
Jan 01, 2002
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superluminescent diodes (QD-SLD), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional SLID structure. We investigated the structure and optical properties of a bilayer sample with different InAs deposition amounts in the first and second layer. We find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. In addition, as the first QDs' density can modulate the density of the QDs on the second layer, due to relatively high QDs density of the first layer, we can get the strong PL intensity from a broad range. We think that for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for QW-SLD. (C) 2002 Elsevier Science B.V. All rights reserved.

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