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Nonlinear tuning in InGaAsP Embedded Rings

Authors
  • Sadasivan, Viswas1, 2
  • Das, Utpal1
  • 1 Indian Institute of Technology Kanpur, Electrical Engineering Department, Kanpur, UP, 208016, India , Kanpur (India)
  • 2 Amrita Vishwa Vidyapeetham, Department of Electronics and Communication Engineering, Amritapuri, 690525, India , Amritapuri (India)
Type
Published Article
Journal
Optical and Quantum Electronics
Publisher
Springer US
Publication Date
Jan 25, 2018
Volume
50
Issue
2
Identifiers
DOI: 10.1007/s11082-018-1347-x
Source
Springer Nature
Keywords
License
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Abstract

Embedded Rings (ER) have been fabricated on InGaAsP/InP multi-quantum wells (MQW) using electron beam lithography and methane + hydrogen reactive ion etching through Cr/SiO2 etched mask. The ER showed a spectrum with interfering resonance modes which has been positively compared with simulation. The device has been used to demonstrate low speed nonlinear tuning of 2 nm with 10 mW input optical power.

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