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Nonlinear Effects in MSM Structures Based on Ag4SSe

Authors
  • Gadzhieva, G. S.1
  • Akhmedov, I. A.1
  • Abdul-zade, N. N.1
  • 1 Institute of Physics, National Academy of Sciences of Azerbaijan, 33 G. Dzhavid Ave., Baku, AZ1143, Azerbaijan , Baku (Azerbaijan)
Type
Published Article
Journal
Journal of Engineering Physics and Thermophysics
Publisher
Springer US
Publication Date
Jul 01, 2015
Volume
88
Issue
4
Pages
1030–1033
Identifiers
DOI: 10.1007/s10891-015-1281-8
Source
Springer Nature
Keywords
License
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Abstract

MSM structures W–Ag4SSe–W have been produced and their volt–ampere characteristics in the temperature range 290–350 K and at a temperature of 77 K were investigated. It is shown that the volt–ampere characteristic of such an MSM structure is substantially nonlinear and takes an N-like shape at different polarities of the voltage applied to the structure and that the portion of this characteristic corresponding to the negative resistance of the structure is preceded by the portion with a zero slope. It was established that the breakdown voltage of the volt–ampere characteristic of an W–Ag4SSe–W structure is determined by its temperature and is equal to ~0.3 V, which corresponds to the strength 1 V/cm of the electric field in it, and that the breakdown current of the structure changes by the law I ~ T 0.25 with increase in its temperature. The nonlinearity of the volt–ampere characteristics with a negative-resistance portion of the W–Ag4SSe–W structures obtained is explained by the existence of the trapping level in them at a certain state of the electrons at the metal–semiconductor interface.

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