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Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

Authors
  • Hosseini Shokouh, Seyed Hossein
  • Raza, Syed Raza Ali
  • Lee, Hee Sung
  • Im, Seongil
Type
Published Article
Journal
Physical Chemistry Chemical Physics
Publisher
The Royal Society of Chemistry
Publication Date
Aug 20, 2014
Volume
16
Issue
31
Pages
16367–16372
Identifiers
DOI: 10.1039/c4cp01266f
PMID: 24985947
Source
Medline
License
Unknown

Abstract

On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

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