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Nitride-based electron devices for high-power/high-frequency applications

Authors
  • Gil, Bernard
  • Cordier, Yvon
  • Fujishima, Tatsuya
  • Lu, Bin
  • Matioli, Elison
  • Palacios, Tomas
Publication Date
Jan 01, 2013
Source
Infoscience @ EPFL
Keywords
License
Unknown
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Abstract

Progress in the development of III-nitride materials has made possible the fabrication of many different types of electron devices. This chapter describes the main advantages of GaN-based electronics as well as some of the main electronic devices developed with this material system. We introduce the key material properties and figures of merit that make III-nitride materials ideal for many high-power/high-frequency applications. Then we focus on the different GaN diode structures developed so far, before discussing GaN bipolar transistors. Finally, we review the state of the art regarding field-effect transistors, both lateral and vertical.

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