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Nitride-based electron devices for high-power/high-frequency applications

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Infoscience @ EPFL
Keywords
  • Transistors
  • Diodes
  • Heterostructures
  • Bipolar Junctions
  • Schottky Junction
  • Metal-Oxide-Semiconductor Junction
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Abstract

Progress in the development of III-nitride materials has made possible the fabrication of many different types of electron devices. This chapter describes the main advantages of GaN-based electronics as well as some of the main electronic devices developed with this material system. We introduce the key material properties and figures of merit that make III-nitride materials ideal for many high-power/high-frequency applications. Then we focus on the different GaN diode structures developed so far, before discussing GaN bipolar transistors. Finally, we review the state of the art regarding field-effect transistors, both lateral and vertical.

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