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n-Graphene/p-Silicon-based Schottky junction solar cell, with very high power conversion efficiency

Authors
  • Wirth-Lima, A. J.1
  • Alves-Sousa, P. P.2
  • Bezerra-Fraga, W.1, 2
  • 1 Federal Institute of Education, Science and Technology of Ceará, Campus Sobral, Fortaleza, Ceará, Brazil , Fortaleza (Brazil)
  • 2 Federal University of Ceará (U.F.C.), Sobral, Ceará, Brazil , Sobral (Brazil)
Type
Published Article
Journal
SN Applied Sciences
Publisher
Springer International Publishing
Publication Date
Jan 21, 2020
Volume
2
Issue
2
Identifiers
DOI: 10.1007/s42452-020-2056-1
Source
Springer Nature
Keywords
License
Yellow

Abstract

We are presenting a solar cell consisting of electron-doped graphene (n-G)/holes-doped silicon (p-Si) Schottky junction, which provides a very high power conversion efficiency (PCE). The high PCE of our solar cell is caused by its high Schottky barrier height, which gives a very low value for the saturated reverse current (I0), and consequently, occurs a very low value of the current flowing through the forward-biased Schottky junction (value tending to zero). Therefore, as all photogenerated current goes to the external circuit, the solar cell PCE, we are presenting is very high, which exceeds the Shockley–Quiesser limit. It is noteworthy that the n-G/p-Si solar cells with resistance series Rs = 17.52 Ω, and Rs = 10.00 Ω presented PCE values ≈ 22.55%, and ≈ 39.51%, respectively. Since there is no current going through the Schottky junction, that n-G/p-Si solar cell operates similarly to an electrochemical generator. To get the characteristic parameters of our solar cell, we used an analytical/numerical methodology.

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