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New Growth Frontier: Superclean Graphene.

  • Zhang, Jincan1, 2
  • Sun, Luzhao1, 2
  • Jia, Kaicheng1, 2
  • Liu, Xiaoting1, 2, 3
  • Cheng, Ting1, 2, 3
  • Peng, Hailin1, 2
  • Lin, Li4
  • Liu, Zhongfan1, 2
  • 1 Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China. , (China)
  • 2 Beijing Graphene Institute (BGI), Beijing 100095, People's Republic of China. , (China)
  • 3 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China. , (China)
  • 4 School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom. , (United Kingdom)
Published Article
ACS Nano
American Chemical Society
Publication Date
Aug 25, 2020
DOI: 10.1021/acsnano.0c06141
PMID: 32840993


The last 10 years have witnessed significant progress in chemical vapor deposition (CVD) growth of graphene films. However, major hurdles remain in achieving the excellent quality and scalability of CVD graphene needed for industrial production and applications. Early efforts were mainly focused on increasing the single-crystalline domain size, large-area uniformity, growth rate, and controllability of layer thickness and on decreasing the defect concentrations. An important recent advance was the discovery of the inevitable contamination phenomenon of CVD graphene film during high-temperature growth processes and the superclean growth technique, which is closely related to the surface defects and to the peeling-off and transfer quality. Superclean graphene represents a new frontier in CVD graphene research. In this Perspective, we aim to provide comprehensive understanding of the intrinsic growth contamination and the experimental solution of making superclean graphene and to provide an outlook for future commercial production of high-quality CVD graphene films.

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