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New Chemical Technologies Based on Turing Reaction–Diffusion Processes

Authors
  • Shevchenko, V. Ya.1
  • Kovalchuk, M. V.2
  • Oryshchenko, A. S.3
  • Perevislov, S. N.1
  • 1 Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences, St. Petersburg, 199034, Russia , St. Petersburg (Russia)
  • 2 National Research Center “Kurchatov Institute”, Moscow, 123182, Russia , Moscow (Russia)
  • 3 Gorynin Central Research Institute of Structural Materials “Prometey,” National Research Center “Kurchatov Institute”, St. Petersburg, 191015, Russia , St. Petersburg (Russia)
Type
Published Article
Journal
Doklady Chemistry
Publisher
Pleiades Publishing
Publication Date
Feb 01, 2021
Volume
496
Issue
2
Pages
28–31
Identifiers
DOI: 10.1134/S0012500821020038
Source
Springer Nature
Keywords
License
Yellow

Abstract

AbstractDiamond–SiC composite materials were obtained by impregnation with gaseous and liquid Si. The mechanisms of the impregnation and consolidation of the diamond–silicon carbide composites were studied. The effect of the Turing reaction–diffusion mechanism on the sintering of the diamond–SiC materials, the formation of the microstructure, and the mechanical properties was shown for the first time.

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