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Nanoscale Field-Effect Transistors: An Ultimate Size Analysis

Authors
  • Pikus, F. G.
  • Likharev, K. K.
Type
Preprint
Publication Date
Nov 17, 1997
Submission Date
Jun 03, 1997
Identifiers
DOI: 10.1063/1.120473
arXiv ID: cond-mat/9706026
Source
arXiv
License
Unknown
External links

Abstract

We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D electrons in an undoped channel between highly doped source and drain. When applied to silicon n-MOSFETs, calculations show that the voltage gain (necessary for logic applications) drops sharply at L ~ 10 nm, while the conductance modulation remains sufficient for memory applications until L ~ 4 nm.

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