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Multilevel devices of YBa/sub 2/Cu/sub 3/O/sub 7/ with NdGaO/sub 3/ barrier

Authors
  • Grundler, D.
  • Krumme, J.-P.
  • David, B.
  • Doessel, O.
Publication Date
Jan 01, 1995
Source
Infoscience @ EPFL
License
Unknown
External links

Abstract

We have fabricated YBa/sub 2/Cu/sub 3/O/sub 7/ ramp-type junctions incorporating a barrier layer of NdGaO/sub 3/ with a nominal thickness of 2 nm. The junctions exhibit pronounced Josephson effects and operate up to 82 K. The characteristics are well described within the resistively shunted junction model. We observe large hysteresis parameters /spl beta//sub c/ even at elevated temperatures. The output voltage of a high-T/sub c/ dc SQUID is found to benefit from the intrinsic junction capacitance.

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