Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor

We report the latest results of the3C-SiC layer growth on Si(100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system with a rotating susceptor that was designed to support up to three50 mm-diameter wafers.3C-SiC film properties of the intra-wafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity(σ/mean) of～3.40% and～5.37% have been achieved in the3×50 mm configuration. Within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than4% and4.24%, respectively.?2011 Chinese Institute of Electronics.