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Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor

  • Yan, Guoguo
  • Sun, Guosheng
  • Wu, Hailei
  • Wang, Lei
  • Zhao, Wanshun
  • Liu, Xingfang
  • Zeng, Yiping
  • Wen, Jialiang
  • Yan, G.([email protected])
Publication Date
Jan 01, 2011
Knowledge Repository of SEMI,CAS
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We report the latest results of the3C-SiC layer growth on Si(100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system with a rotating susceptor that was designed to support up to three50 mm-diameter wafers.3C-SiC film properties of the intra-wafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity(σ/mean) of~3.40% and~5.37% have been achieved in the3×50 mm configuration. Within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than4% and4.24%, respectively.?2011 Chinese Institute of Electronics.

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