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MOVPE growth of GaN and LED on (111) MgAl2O4

Authors
  • duan, sk
  • teng, xg
  • wang, yt
  • gh, li
  • jiang, hx
  • han, p
  • dc, lu
  • chinese, sk r duan
Publication Date
Jan 01, 1998
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

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