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MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Authors
  • Cao, Ting
  • Feng, Ji
  • Shi, Junren
  • Niu, Qian
  • Wang, Enge
Type
Published Article
Publication Date
Dec 16, 2011
Submission Date
Dec 16, 2011
Identifiers
DOI: 10.1038/ncomms1882
Source
arXiv
License
Yellow
External links

Abstract

A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed "valleytronics", if charge carrier imbalance between the valleys can be achieved. The physics of valley polarization will make possible electronic devices such as valley filter and valley valve, and optoelectronic Hall devices, all very promising for next-generation electronic and optoelectronic applications. The key challenge lies with achieving valley imbalance, of which a convincing demonstration in a two-dimensional honeycomb structure remains evasive, while there are only a handful of examples for other materials. We show here, using first principles calculations, that monolayer MoS_2, a novel two-dimensional semiconductor with a 1.8 eV direct band gap, is an ideal material for valleytronics by valley- selective circular dichroism, with ensuing valley polarization and valley Hall effect.

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