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Morphology of wetting-layer states in a simple quantum-dot wetting-layer model.

Authors
  • Eichelmann, Marcel1
  • Wiersig, Jan
  • 1 Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Postfach 4120, D-39016 Magdeburg, Germany. , (Germany)
Type
Published Article
Journal
Journal of Physics Condensed Matter
Publisher
IOP Publishing
Publication Date
Feb 13, 2020
Volume
32
Issue
7
Pages
75301–75301
Identifiers
DOI: 10.1088/1361-648X/ab4f30
PMID: 31627203
Source
Medline
Language
English
License
Unknown

Abstract

The excitation of semiconductor quantum dots often involves an attached wetting layer with delocalized single-particle energy eigenstates. These wetting-layer states are usually approximated by (orthogonalized) plane waves. We show that this approach is too crude. Even for a simple model based on the effective-mass approximation and containing one or a few lens-shaped quantum dots on a rectangular wetting layer, the wetting-layer states typically show a substantially irregular and complex morphology. To quantify this complexity we use concepts from the field of quantum chaos such as spectral analysis of energy levels, amplitude distributions, and localization of energy eigenstates.

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