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MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs

Authors
  • Kuenzel, H.
  • Gibis, R.
  • Kizuki, H.
  • Albrecht, P.
  • Ebert, S.
  • Harde, P.
  • Malchow, S.
  • Kaiser, R.
Publication Date
Jan 01, 1998
Source
Fraunhofer-ePrints
Keywords
Language
English
License
Unknown
External links

Abstract

The fabrication of advanced undoped and semi-insulating optical waveguides to be implemented in integrated photonic ICs on InP is demonstrated on the basis of the metal organic molecular beam epitaxy growth technique. The optimised deposition of waveguide layer structures of high crystalline and optical quality resulted in optical losses as low as 0.7/0.9 dB/cm (TE/TM polarisation) at lambda =1.55 mu m. Implementation of a thin InP marker between the slab and the rib served to control rib formation during dry etching. Doping with iron using an elemental source was applied for semi-insulating behaviour of the waveguide devices. Selective area deposition of the waveguide layer structure at a growth temperature of 485 degrees C around a masked laser layer stack to enable laser/waveguide butt coupling has been developed to meet the requirements imposed by photonic ICs.

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