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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

Authors
  • ruiting), rt hao (hao
  • shukang), sk deng (deng
  • lanxian), lx shen (shen
  • peizhi), pz yang (yang
  • jielei), (tu
  • hua), h liao (liao
  • yingqiang), (xu
  • zhichuan), zc niu (niu
Publication Date
Jan 01, 2010
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

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