Affordable Access

Access to the full text

Modeling of SiO2 CVD from TEOS/ozone in a separate-gas-injection reactor

Authors
  • Kim, Eui Jung1
  • Gill, William N.1, 2
  • 1 University of Ulsan, Department of Chemical Engineering, San 29, Moogeodong, Namku, Ulsan, 680-749, Korea , Ulsan
  • 2 Rensselaer Polytechnic Institute, Department of Chemical Engineering, Troy, New York, 12180-3590, USA , Troy
Type
Published Article
Journal
Korean Journal of Chemical Engineering
Publisher
Springer-Verlag
Publication Date
Jan 01, 1998
Volume
15
Issue
1
Pages
56–63
Identifiers
DOI: 10.1007/BF02705306
Source
Springer Nature
Keywords
License
Yellow

Abstract

A mathematical model has been developed to study the chemical vapor deposition of SiO2 from TEOS and ozone in a cold-wall separate-gas-injection reactor related to the commercial Watkins-Johnson 7000. The model employs the kinetic scheme proposed previously by Kim and Gill. Control-volume-based finite difference methods are used to solve for the two-dimensional fluid velocity, temperature, and concentration distributions. The model successfully describes experimental data of film thickness profiles available. We systematically investigate the dependence of deposition rate on operating conditions including O3/TEOS ratio, reactant flow rate, and injector-wafer spacing. The predicted results indicate that a high TEOS flow rate and an O3/TEOS ratio of around 30 are preferable for obtaining high deposition rates and good film quality.

Report this publication

Statistics

Seen <100 times