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Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

Authors
  • Chen, T.
  • Köhler, F.
  • Heidt, A.
  • Huang, Y.
  • Finger, F.
  • Carius, R.
Publication Date
Jan 01, 2011
Source
Juelich Shared Electronic Resources (JuSER)
Keywords
Language
English
License
White
External links

Abstract

An overview on microstructural and electronic properties of stoichiometric microcrystalline silicon carbide (mu c-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low substrate temperatures will be given. The electronic properties are strongly dependent on crystalline phase, local bonding, strain, defects, impurities, etc. Therefore these quantities need to be carefully investigated in order to evaluate their influence and to develop strategies for material improvement. We will particularly address the validity of different experimental methods like Raman spectroscopy and IR spectroscopy to provide information on the crystalline volume fraction by comparing the results with Transmission Electron Microscopy (TEM) and X-Ray diffraction data. Finally the electronic properties as derived from optical absorption and transport measurements will be related to the microstructure. (C) 2011 Elsevier B.V. All rights reserved.

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