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Micrometer-scale ballistic transport in encapsulated graphene at room temperature.

Authors
  • Mayorov, Alexander S
  • Gorbachev, Roman V
  • Morozov, Sergey V
  • Britnell, Liam
  • Jalil, Rashid
  • Ponomarenko, Leonid A
  • Blake, Peter
  • Novoselov, Kostya S
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Geim, A K
Type
Published Article
Journal
Nano Letters
Publisher
American Chemical Society
Publication Date
Jun 08, 2011
Volume
11
Issue
6
Pages
2396–2399
Identifiers
DOI: 10.1021/nl200758b
PMID: 21574627
Source
Medline
License
Unknown

Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

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