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Micrometer-scale ballistic transport in encapsulated graphene at room temperature.

Authors
Type
Published Article
Journal
Nano Letters
1530-6992
Publisher
American Chemical Society
Publication Date
Volume
11
Issue
6
Pages
2396–2399
Identifiers
DOI: 10.1021/nl200758b
PMID: 21574627
Source
Medline
License
Unknown

Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

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