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Methods of simulating thin film deposition using spray pyrolysis techniques

Authors
  • Filipovic, Lado
  • Selberherr, Siegfried
  • Mutinati, Giorgio C.
  • Brunet, Elise
  • Steinhauer, Stephan
  • Köck, Anton
  • Teva, Jordi
  • Kraft, Jochen
  • Siegert, Jörg
  • Schrank, Franz1, 2, 3, 4, 5
  • 1 Institute for Microelectronics
  • 2 TU Wien
  • 3 Molecular Diagnostics, Health & Environment
  • 4 AIT GmbH
  • 5 ams AG
Type
Published Article
Journal
Microelectronic Engineering
Publisher
Elsevier
Publication Date
Jan 01, 2013
Accepted Date
Dec 13, 2013
Volume
117
Pages
57–66
Identifiers
DOI: 10.1016/j.mee.2013.12.025
Source
Elsevier
Keywords
License
Unknown

Abstract

Integration of thin tin oxide film formation into CMOS technology is a fundamental step to realize sensitive smart gas sensor devices. Spray pyrolysis is a deposition technique which has the potential to fulfil this requirement. A model for spray pyrolysis deposition is developed and implemented within a Level Set framework. Two models for the topography modification due to spray pyrolysis deposition are presented, with an electric and a pressure atomizing nozzle. The resulting film growth is modeled as a layer by layer deposition of the individual droplets which reach the wafer surface or as a CVD-like process, depending on whether the droplets form a vapor near the interface or if they deposit a film only after surface collision.

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